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| SPICE MODEL: 2N7002 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability E G TOP VIEW S D G H K J L D B C A SOT-23 Dim A B C D E G M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 Mechanical Data * * * * * * * * * Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking: K72, K7A, K7B (See Page 2) Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) H J K L Drain M All Dimensions in mm Gate Source Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100C Pulsed VGSS ID Pd RJA Tj, TSTG Value 60 60 20 40 115 73 800 300 2.4 417 -55 to +150 Units V V V mA mW mW/C C/W C Characteristic Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Derating above TA = 25C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS11303 Rev. 19- 2 1 of 4 www.diodes.com 2N7002 (c) Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C @ TC = 125C IDSS IGSS VGS(th) @ Tj = 25C @ Tj = 125C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 1.0 0.5 80 Typ 70 3.2 4.4 1.0 22 11 2.0 7.0 11 Max 1.0 500 10 2.5 7.5 13.5 50 25 5.0 20 20 Unit V A nA V A mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Ordering Information (Note 4) Device 2N7002-7-F Notes: Packaging SOT-23 Shipping 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K7x K7x = Product Type Marking Code, e.g. K72 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS11303 Rev. 19- 2 2 of 4 www.diodes.com YM 2N7002 1.0 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 7 10V Tj = 25C ID, DRAIN-SOURCE CURRENT (A) 6 5 5.5V VGS = 5.0V 0.8 0.6 4 5.0V 0.4 3 VGS = 10V 2 0.2 1 2.1V 0 0 1 2 3 4 5 0 0 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 3.0 6 5 2.5 4 ID = 500mA 2.0 3 ID = 50mA 2 1.5 VGS = 10V, ID = 200mA 1 1.0 -55 0 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 350 10 VGS, GATE SOURCE CURRENT (V) 9 8 7 6 5 4 3 2 1 0 0 0.2 0.4 TA = -55C TA = +25C TA = +125C TA = +75C VDS = 10V Pd, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0.6 0.8 1 0 25 50 75 100 125 150 175 200 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics TA, AMBIENT TEMPERATURE (C) Fig. 6 Max Power Dissipation vs. Ambient Temperature DS11303 Rev. 19- 2 3 of 4 www.diodes.com 2N7002 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS11303 Rev. 19- 2 4 of 4 www.diodes.com 2N7002 |
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